fea tures processed to optek?s space level screening program patterned after fsa/scc generic specification 5000 miniature hermetically sealed package ideal for direct mounting in pc boards mechanically and spectrally matched to the op224 series led description the op604esa consists of a high reliability npn silicon phototransistor mounted in a miniature glass lensed, hermetically sealed, ?pill? package. all devices are processed to optek?s program patterned after esa/scc generic specification no. 5000. see page 13-4 for details. this device type is lensed and has an acceptance half angle of 18 o measured from the optical axis to the half power point. the series is also mechanically and spectrally matched to optek?s op224 series high reliability infrared emitting diode. ab so lute maxi mum rat ings (t a = 25 o c un less oth er wise noted) stor age tem pera ture range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 o c to +150 o c op er at ing tem pera ture range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to +125 o c collector- emitter volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 v emitter- collector volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 v sol der ing tem pera ture (for 5 sec onds with sol der ing iron) . . . . . . . . . . . . . 240 o c (1) power dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mw (2) notes: (1) no-clean or low solids rma flux is recommended. duration can be extended to 10 seconds maximum when wave soldering. (2) derate linearly 0.5 mw/ o c above 25 o c. (3) ?x? defines the testing level per esa/scc generic specification 5000, chart iii. ?x? will be either ?b? (full processing) or ?c? (reduced processing). ?n? defines lot acceptance testing. ?n? will be either 1, 2, or 3. level 3 is the lowest defined level with emphasis on electrical tests, solderability, and visual inspection. level 2 requires all tests of level 3 and adds indurance testing (burn-in) with drift limits on key parameters. level 1 is the most stringent lat level and includes all requirements of levels 2 and 3 plus additional testing for tolerance of thermal, mechanical, and environmental exposure. prod uct bul le tin op604esa sep tem ber 1996 high re li abil ity npn sili con pho to tran sis tor type op604esa- xn (3) op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (97 2) 323- 2200 fax (972) 323- 2396 part num ber guide op604esa- xn op tek esa/scc speci fi ca tion high re li abil ity no. 5000 ?b? - full proc ess ing ?c? - re duced proc ess ing level ?1? en vi ron men tal/me chani cal plus 2 & 3 level ?2? life test ing plus level 3 level ?3" elec tri cal in spec tion 13-32
type OP604ESA-XN optek reserves the right to make changes at any time in order to improve design and to supply the b est product possible. op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (97 2) 323- 2200 fax (972) 323- 2396 elec tri cal char ac ter is tics (t a = 25 o c un less oth er wise noted) sym bol pa rame ter min typ max units test con di tions i c(on) on-state collector current 7.0 ma v ce = 5.0 v, e e = 20 mw/cm 2(3)(4) i ceo collector dark current 25 100 na m a v ce = 10.0 v, e e = 0 v ce = 30.0 v, e e = 0, t a = 100 o c v (br)ceo collector-emitter breakdown voltage 50 v i c = 100 m a, e e = 0 v (br)eco emitter-collector breakdown voltage 7.0 v i e = 100 m a, e e = 0 v ce(sat) collector-emitter saturation voltage 0.40 v i c = 0.4 ma, e e = 20 mw/cm 2(3)(4) t r rise time 20.0 m s v cc = 30 v, i c = 1.00 ma, r l = 100 w t f fall time 20.0 m s 13-33
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